IEEE - Institute of Electrical and Electronics Engineers, Inc. - Porosity effects on low-k dielectric film strength and interfacial adhesion

Proceedings of the IEEE 2002 International Interconnect Technology Conference

Author(s): G. Kloster ; T. Scherban ; G. Xu ; J. Blaine ; B. Sun ; Y. Zhou
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2002
Conference Location: Burlingame, CA, USA, USA
Conference Date: 5 June 2002
Page Count: 3
Page(s): 242 - 244
ISBN (Paper): 0-7803-7216-6
DOI: 10.1109/IITC.2002.1014946
Regular:

The elastic modulus and hardness of low k dielectric films rapidly decrease as porosity increases. By contrast, interfacial adhesion is relatively insensitive to porosity. Adhesion energy values... View More

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