IEEE - Institute of Electrical and Electronics Engineers, Inc. - High power density and large voltage swing of enhancement-mode Al/sub 0.5/Ga/sub 0.5/As/InGaAs pHEMTs for 3.5 V L-band applications

APMC 2001. 2001 Asia-Pacific Microwave Conference

Author(s): Hsien-Chin Chiu ; Shih-Cheng Yang ; Yi-Jen Chan
Sponsor(s): Minstr. Educ.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Taipei, Taiwan, Taiwan
Conference Date: 3 December 2001
Volume: 3
Page Count: 4
ISBN (Paper): 0-7803-7138-0
DOI: 10.1109/APMC.2001.985349
Regular:

High power density and large voltage swing Al/sub 0.5/Ga/sub 0.5/As/InGaAs enhancement-mode pHEMTs operating under V/sub ds/ = 3.5 V for L-band application have been developed. In the study, we... View More

Advertisement