IEEE - Institute of Electrical and Electronics Engineers, Inc. - 4H- and 6H-SiC vertical static induction transistor with p-n junction as a gate

2001 International Semiconductor Device Research Symposium. Symposium Proceedings

Author(s): V.I. Sankin ; P.P. Shkrebiy
Sponsor(s): IEEE
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Washington, DC, USA, USA
Conference Date: 5 December 2001
Page Count: 4
Page(s): 579 - 582
ISBN (Paper): 0-7803-7432-0
DOI: 10.1109/ISDRS.2001.984584
Regular:

Silicon carbide has attracted considerable interest as a material for high power, high frequency devices. The unique properties such as high thermal conductivity, anomaly large breakdown fields... View More

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