IEEE - Institute of Electrical and Electronics Engineers, Inc. - GaN/AlGaN HEMT microwave class-E power amplifier

2001 International Semiconductor Device Research Symposium. Symposium Proceedings

Author(s): S.S. Islam ; A.F.M. Anwar
Sponsor(s): IEEE
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Washington, DC, USA, USA
Conference Date: 5 December 2001
Page Count: 4
Page(s): 446 - 449
ISBN (Paper): 0-7803-7432-0
DOI: 10.1109/ISDRS.2001.984541
Regular:

We report the first GaN/AlGaN microwave class-E power amplifier. A physics-based nonlinear model of the GaN/AlGaN HEMT is used instead of the switching models of the active device considered in... View More

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