IEEE - Institute of Electrical and Electronics Engineers, Inc. - Avalanche breakdown of 4H-SiC diodes with edge terminated by a 2/spl deg/ positive bevel

2001 International Semiconductor Device Research Symposium. Symposium Proceedings

Author(s): Feng Yan ; Chao Qin ; J.H. Zhao
Sponsor(s): IEEE
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Washington, DC, USA, USA
Conference Date: 5 December 2001
Page Count: 4
Page(s): 216 - 219
ISBN (Paper): 0-7803-7432-0
DOI: 10.1109/ISDRS.2001.984479
Regular:

The authors present attempts toward obtaining impact ionization rates of both holes and electrons. Diodes terminated by a 2/spl deg/ positive bevel have been fabricated with the anode area ranging... View More

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