IEC - International Electrotechnical Commission - IEC 62373-1:2020
Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 15 July 2020 |
| Status: | published |
| Page Count: | 44 |
| ICS Code (Transistors): | 31.080.30 |
abstract:
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
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Document History
IEC 62373-1:2020
July 15, 2020
Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document...