IEC - International Electrotechnical Commission - IEC 63284:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 21 April 2022 |
| Status: | published |
| Page Count: | 25 |
| ICS Code (Transistors): | 31.080.30 |
abstract:
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load... View More
Document History
IEC 63284:2022
April 21, 2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching,...