IEC - International Electrotechnical Commission - IEC 63275-2:2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 11 May 2022 |
| Status: | published |
| Page Count: | 20 |
| ICS Code (Transistors): | 31.080.30 |
abstract:
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide... View More
Document History
IEC 63275-2:2022
May 11, 2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC)...