IEC - International Electrotechnical Commission - IEC 63068-4:2022
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 27 July 2022 |
| Status: | published |
| Page Count: | 25 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
abstract:
IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical... View More
Document History
IEC 63068-4:2022
July 27, 2022
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical...