IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effective amplification of microwaves in structures with field and secondary emission

Proceedings of International University Conference on Electronics and Radiophysics of Ultra-High Frequencies

Author(s): Galdetskiy, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Saint Petersburg, Russia, Russia
Conference Date: 24 May 1999
Page(s): 313 - 315
ISBN (Paper): 5-7422-0083-8
DOI: 10.1109/UHF.1999.787947
Regular:

A new design of microwave distributed amplifier (DA) has been proposed, in which RF voltage is applied to anode-gate gap, FEA is a source of unmodulated current, anode is more negative than gate,... View More

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