IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Study on the Failure Evolution to Short Circuit of Nanosilver Sintered Press-Pack IGBT

Author(s): Hui Li ; Haiyang Long ; Ran Yao ; Xiao Wang ; Yi Zhong ; Renze Yu ; Jinyuan Li
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2020
Volume: 10
Page(s): 184 - 187
ISSN (Electronic): 2156-3985
ISSN (Paper): 2156-3950
DOI: 10.1109/TCPMT.2019.2957759
Regular:

In order to improve the heat dissipation capability of high-power press-pack insulated gate bipolar transistor (PP-IGBT), the nanosilver paste was utilized to package a single 3.3-kV/50-A PP-IGBT... View More

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