IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling Electrical Switching Behavior of Carbon Resistive Memory

Author(s): Qiao-Feng Ou ; Lei Wang ; Bang-Shu Xiong
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2020
Volume: 8
Page(s): 8,735 - 8,742
ISSN (Electronic): 2169-3536
DOI: 10.1109/ACCESS.2020.2964601
Regular:

The amorphous carbon-based resistive memory has recently attained vast attention due to its non-volatility, fast switching speed, long data retention, and multilevel recording. However, the memory... View More

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