IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photosensor Based on Split Gate TMD TFET Using Photogating Effect for Visible Light Detection

Author(s): Swati Joshi ; Prabhat Kumar Dubey ; Brajesh Kumar Kaushik
Sponsor(s): IEEE Sensors Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (CD): 2379-9153
ISSN (Electronic): 1558-1748
ISSN (Paper): 1530-437X
DOI: 10.1109/JSEN.2020.2966728
Regular:

This paper reports a highly-sensitive and low power photosensor based on split gate tunnel field effect transistor (TFET) structure for visible light detection in wavelength ranging from 450-750... View More

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