IEEE - Institute of Electrical and Electronics Engineers, Inc. - Accurate estimation of electron velocity overshoot in sub-quarter micron silicon structures and MOSFET devices

Proceedings of the Fifteenth National Radio Science Conference. NRSC '98

Author(s): El-Saba, M.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Cairo, Egypt, Egypt
Conference Date: 24 February 1998
ISBN (Paper): 0-7803-5121-5
DOI: 10.1109/NRSC.1998.711503
Regular:

In this paper we show that the exaggerated electron-velocity overshoot in sub-quarter micron structures, which has been reported in the literature as a drawback of the hydrodynamic model (HDM), is... View More

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