IEEE - Institute of Electrical and Electronics Engineers, Inc. - Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics

Author(s): Stefano Bonaldo ; Vamsi Putcha ; Dimitri Linten ; S. T. Pantelides ; Robert A. Reed ; Ronald D. Schrimpf ; Daniel M. Fleetwood ; Simeng E. Zhao ; Andrew O'Hara ; Mariia Gorchichko ; En Xia Zhang ; Simone Gerardin ; Alessandro Paccagnella ; Niamh Waldron ; Nadine Collaert
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2019.2957028
Regular:

Total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO2/Al2O3 gate stack. Transistors are irradiated up to 500 krad(SiO2) and annealed at high temperature. Irradiated... View More

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