IEEE - Institute of Electrical and Electronics Engineers, Inc. - Data Retention Voltage Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID

Author(s): Daisuke Kobayashi ; Yoshiharu Mori ; Daisuke Matsuura ; Masaki Kusano ; Takanori Narita ; Shigeru Ishii ; Kazuyuki Hirose ; Keita Sakamoto ; Shogo Okamoto ; Shunsuke Baba ; Hiroyuki Shindou ; Osamu Kawasaki ; Takahiro Makino ; Takeshi Ohshima
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2019.2956760
Regular:

Single Event Upset (SEU) hardness varies across dies, wafers, and lots-even just after fabrication and further across time. Mechanisms of post-fabrication variations include Total Ionizing Dose... View More

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