IEEE - Institute of Electrical and Electronics Engineers, Inc. - Integrated 256 cell photonic phase change memory with 512-bit capacity

Author(s): Johannes Feldmann ; Nathan Youngblood ; Xuan Li ; David Wright ; Harish Bhaskaran ; Wolfram Pernice
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-4542
ISSN (Paper): 1077-260X
DOI: 10.1109/JSTQE.2019.2956871
Regular:

All-optical nonvolatile memories enable storage of telecommunication data without detours through electronic circuitry. Phase-change materials provide the means to embed such memories within... View More

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