IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis and Modeling of Lateral Power Devices with Stepped Drift Region Thickness via Effective Concentration Profile Concept

Author(s): Jun Zhang ; Yu-Feng Guo ; Chen-yang Huang ; Fang-Ren Hu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2019.2956981
Regular:

Stepped drift region thickness technique alters the drift region doping dose and its distribution, and therefore modulates the device's off-state characteristics. However, due to the sophisticated... View More

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