IEEE - Institute of Electrical and Electronics Engineers, Inc. - The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors

Author(s): Kazuhiko Endo ; Yasumitsu Miyata ; Toshifumi Irisawa
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2019
Volume: 13
Page(s): 39 - 42
ISSN (Electronic): 1942-7808
ISSN (Paper): 1932-4510
DOI: 10.1109/MNANO.2019.2941030
Regular:

Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this... View More

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