IEEE - Institute of Electrical and Electronics Engineers, Inc. - Microwave Annealing Technologies for Variability Reduction of Nanodevices: A Review of Their Impact on FinFETs

Author(s): Kazuhiko Endo ; Yao-Jen Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2019
Volume: 13
Page(s): 34 - 38
ISSN (Electronic): 1942-7808
ISSN (Paper): 1932-4510
DOI: 10.1109/MNANO.2019.2941029
Regular:

The rapid reduction of feature size in CMOS devices causes their variability to increase, thus reducing the circuit yield [1]-[3]. In particular, the static random access memory (SRAM) cell uses... View More

Advertisement