IEEE - Institute of Electrical and Electronics Engineers, Inc. - Accurate Temperature Estimation of SiC Power mosfet s Under Extreme Operating Conditions

Author(s): Alexander Tsibizov ; Ivana Kovacevic-Badstubner ; Bhagyalakshmi Kakarla ; Ulrike Grossner
Sponsor(s): IEEE Power Electronics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2020
Volume: 35
Page(s): 1,855 - 1,865
ISSN (Electronic): 1941-0107
ISSN (Paper): 0885-8993
DOI: 10.1109/TPEL.2019.2917221
Regular:

Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to estimate the device temperature in operation, typically assuming a constant thermal conductivity and/or... View More

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