IEEE - Institute of Electrical and Electronics Engineers, Inc. - Adaptive Multi-Level Active Gate Drivers for SiC Power Devices

Author(s): Shuang Zhao ; Audrey Dearien ; Yuheng Wu ; Chris Farnell ; Arman Ur Rashid ; Fang Luo ; Homer Alan Mantooth
Sponsor(s): IEEE Power Electronics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2020
Volume: 35
Page(s): 1,882 - 1,898
ISSN (Electronic): 1941-0107
ISSN (Paper): 0885-8993
DOI: 10.1109/TPEL.2019.2922112
Regular:

State-of-the-art silicon carbide (SiC) power devices provide superior performance over silicon devices with much higher switching frequencies/speed and lower losses. High switching speed is... View More

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