IEEE - Institute of Electrical and Electronics Engineers, Inc. - Solution-Processed Yttrium-Doped IZTO Semiconductors for High-Stability Thin Film Transistor Applications

Author(s): Yongpeng Zhang ; Hao Zhang ; Jun Yang ; Xingwei Ding ; Jianhua Zhang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2949702
Regular:

In this article, solution-processed zinc-tin-oxide (ZTO), indium-zinc-tin-oxide (IZTO), and yttrium-doped indium-zinc-tin-oxide (IZTO:Y) thin film transistors (TFTs) were... View More

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