IEEE - Institute of Electrical and Electronics Engineers, Inc. - Enhanced Reliability of 7-nm Process Technology Featuring EUV

Author(s): Kihyun Choi ; Hyewon Shim ; Junekyun Park ; Youngwoo Cho ; Hwasung Rhee ; Sangwoo Pae ; Hyun Chul Sagong ; Wonchang Kang ; Hyunjin Kim ; Jiang Hai ; Miji Lee ; Bomi Kim ; Mi-ji Lee ; Soonyoung Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 5
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2950008
Regular:

In this article, we report the reliability characterization of 7-nm technology, in which the highly scaled sixth generation of FinFETs and 256-Mb static random access memory (SRAM) cells were... View More

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