IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nonquasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-Gated Transistors in Logic Gates

Author(s): Xiaowei Feng ; Gabriel Cadilha Marques ; Farhan Rasheed ; Mehdi B. Tahoori ; Jasmin Aghassi-Hagmann
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2947787
Regular:

Printed electronics can benefit from the deployment of electrolytes as gate insulators, which enables a high gate capacitance per unit area (1-10 μ F cm²) due to the formation of electrical... View More

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