IEEE - Institute of Electrical and Electronics Engineers, Inc. - Minimizing Retention Induced Refresh Through Exploiting Process Variation of Flash Memory

Author(s): Yejia Di ; Liang Shi ; Congming Gao ; Qiao Li ; Chun Jason Xue ; Kaijie Wu
Sponsor(s): IEEE Comput. Soc. Tech. Committee on Distributed Process
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2019
Volume: 68
Page(s): 83 - 98
ISSN (CD): 2326-3814
ISSN (Electronic): 1557-9956
ISSN (Paper): 0018-9340
DOI: 10.1109/TC.2018.2858771
Regular:

Refresh schemes have been the default approach in NAND flash memory to avoid data losses. The critical issue of the refresh schemes is that they introduce additional costs on lifetime and... View More

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