IEEE - Institute of Electrical and Electronics Engineers, Inc. - Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiN x Passivations for Microwave GaN HEMTs

Author(s): Tongde Huang ; Johan Bergsten ; Mattias Thorsell ; Niklas Rorsman
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2018
Volume: 65
Page(s): 908 - 914
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2017.2789305
Regular:

Three types of SiNx passivation for microwave AlGaN/GaN HEMTs were deposited with low-pressure chemical vapor deposition under different deposition conditions, resulting in different silicon... View More

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