IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes

Author(s): Ruoshi Peng ; Yue Hao ; Xijun Meng ; Shengrui Xu ; Jincheng Zhang ; Peixian Li ; Jun Huang ; Jinjuan Du ; Ying Zhao ; Xiaomeng Fan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2019
Volume: 66
Page(s): 2,243 - 2,248
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2904110
Regular:

GaN was grown on the sputtered AlN/patterned sapphire substrate under two growth modes by metal-organic chemical vapor deposition, which was named as "rising tide" and "tsunami" growth modes,... View More

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