IEEE - Institute of Electrical and Electronics Engineers, Inc. - Insight Into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

Author(s): Lin Xu ; Chenguang Qiu ; Chenyi Zhao ; Zhiyong Zhang ; Lian-Mao Peng
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2019
Volume: 66
Page(s): 3,535 - 3,540
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2920846
Regular:

Carbon nanotube field-effect transistors (CNT FETs) with gate length down to 10 nm are fabricated and analyzed by fitting the experimental data through the virtual-source (VS) model. Due to the... View More

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