IEEE - Institute of Electrical and Electronics Engineers, Inc. - Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications

Author(s): Quantan Wu ; Nianduan Lu ; Di Geng ; Hong Wang ; Ling Li ; Ming Liu ; Guanhua Yang ; Congyan Lu ; Guangwei Xu ; Jiawei Wang ; Bingjie Dang ; Yuxin Gong ; Xuewen Shi ; Xichen Chuai
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2019
Volume: 66
Page(s): 4,087 - 4,091
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2928792
Regular:

In this paper, we demonstrate a tunable Schottky diode based on amorphous indium-gallium-zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode-one... View More

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