IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of Neutron Irradiation on the Static and Switching Characteristics of High-Voltage 4H-SiC p-type Gate Turn-off Thyristors

Author(s): Peng Dong ; Yingxin Cui ; Zhe Chen ; Yunfei Gu ; Kun Zhou ; Shuairong Deng ; Le Zhong ; Ying Zhang ; Jun-Tao Li
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2019
Volume: 66
Page(s): 3,910 - 3,915
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2928836
Regular:

Silicon carbide (SiC) has shown substantial promise in the fabrication of high-power devices, and SiC Schottky diodes and field-effect transistors (FETs) have been considered as potential... View More

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