IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Author(s): Huijin Li ; Dedong Han ; Zhuang Yi ; Junchen Dong ; Shengdong Zhang ; Xing Zhang ; Yi Wang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2019
Volume: 66
Page(s): 2,965 - 2,970
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2915625
Regular:

High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing... View More

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