IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of the Fast-Switching LIGBT With Double Gates and Integrated Schottky Barrier Diode

Author(s): Licheng Sun ; Baoxing Duan ; Yandong Wang ; Yintang Yang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2019
Volume: 66
Page(s): 2,675 - 2,680
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2912207
Regular:

A novel fast-switching lateral-insulated gate bipolar transistor (LIGBT) with double gates and integrated Schottky barrier diode (SBD) is proposed and studied in this paper by TCAD simulation. In... View More

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