IEEE - Institute of Electrical and Electronics Engineers, Inc. - NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability

Author(s): Judith Berens ; Gregor Pobegen ; Gerald Rescher ; Thomas Aichinger ; Tibor Grasser
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2941723
Regular:

As the gate oxide (GOX)-SiC interface of SiC MOSFETs is crucial for device performance, it requires special attention. To improve interface quality, device performance, and reliability, commonly,... View More

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