IEEE - Institute of Electrical and Electronics Engineers, Inc. - Correlation between Electromigration-Related Void Volumes and Time-to-Failure by High Resolution X-Ray Tomography and Modeling

Author(s): S. Moreau ; A. Fraczkiewicz ; D. Bouchu ; P. Bleuet ; P. Cloetens ; J. C. Da Silva ; H. Manzanarez ; F. Lorut ; S. Lhostis
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2945089
Regular:

High resolution synchrotron tomography has demonstrated a proportionality between electromigration induced void volume and time-to-failure in hybrid bonding based test structures. A conventional... View More

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