IEEE - Institute of Electrical and Electronics Engineers, Inc. - Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

Author(s): Sheng Gao ; Quanbin Zhou ; Xiaoyi Liu ; Hong Wang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2945175
Regular:

We propose two kinds of stacked materials that effectively yield low drain off-state leakage current, high off-state breakdown voltage and low current collapse simultaneously in AlGaN/GaN HEMT.... View More

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