IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs

Author(s): Chia-Che Chung ; Hung-Yu Ye ; H. H. Lin ; W. K. Wan ; M.-T. Yang ; C. W. Liu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2945474
Regular:

The natural asymmetry of the vertically stacked channels results in the junction temperature difference in nanosheet channels which is dependent on pitch, nanosheet width, channel number, and... View More

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