IEEE - Institute of Electrical and Electronics Engineers, Inc. - CJM: A Compact Model for Double-Gate Junction FETs

Author(s): Nikolaos Makris ; Matthias Bucher ; Farzan Jazaeri ; Jean-Michel Sallese
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2019.2944817
Regular:

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its... View More

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