IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability Prediction of Highly Scaled MOSFET Devices Via Fractal Structure of Spatial Defects

Author(s): Seong-Joon Kim ; Man Soo Kim ; Suk Joo Bae
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2169-3536
DOI: 10.1109/ACCESS.2019.2944955
Regular:

The needs for continuous size reduction of metal-oxide-semiconductor field effect transistor (MOSFET) devices can cause serious reliability concerns. In particular, gate oxide breakdown is... View More

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