IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Author(s): Fumimasa Horikiri ; Noboru Fukuhara ; Hiroshi Ohta ; Naomi Asai ; Yoshinobu Narita ; Takehiro Yoshida ; Tomoyoshi Mishima ; Masachika Toguchi ; Kazuki Miwa ; Taketomo Sato
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-2345
ISSN (Paper): 0894-6507
DOI: 10.1109/TSM.2019.2944844
Regular:

Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than 1 μm,... View More

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