IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 4-32 GHz SiGe Multi-Octave Power Amplifier With 20 dBm Peak Power, 18.6 dB Peak Gain and 156% Power Fractional Bandwidth

Author(s): Manu Viswambharan Thayyil ; Songhui Li ; Niko Joram ; Frank Ellinger
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 4
ISSN (Electronic): 1558-1764
ISSN (Paper): 1531-1309
DOI: 10.1109/LMWC.2019.2942189
Regular:

This letter presents the design and characterization results of a multi-octave power amplifier (MOPA) fabricated in a 0.13-μm SiGe-BiCMOS technology. The single-stage power amplifier is... View More

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