IEEE - Institute of Electrical and Electronics Engineers, Inc. - Suspended AlGaN/GaN HEMT NO₂ Gas Sensor Integrated With Micro-heater

Author(s): Jianwen Sun ; Robert Sokolovskij ; Elina Iervolino ; Zewen Liu ; Pasqualina M. Sarro ; Guoqi Zhang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 8
ISSN (Electronic): 1941-0158
ISSN (Paper): 1057-7157
DOI: 10.1109/JMEMS.2019.2943403
Regular:

We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO₃) nano-film modified gate for nitrogen dioxide (NO₂) detection. The device has a... View More

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