IEEE - Institute of Electrical and Electronics Engineers, Inc. - Secure STT-MRAM Bit-Cell Design Resilient to Differential Power Analysis Attacks

Author(s): Samir Ben Dodo ; Rajendra Bishnoi ; Mehdi B. Tahoori
Sponsor(s): IEEE Computer Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 10
ISSN (Electronic): 1557-9999
ISSN (Paper): 1063-8210
DOI: 10.1109/TVLSI.2019.2940449
Regular:

Spin-transfer torque magnetic random access memory (STT-MRAM) is a promising nonvolatile memory technology for various applications from low power to high-density memory. However, STT-MRAM is... View More

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