IEEE - Institute of Electrical and Electronics Engineers, Inc. - Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Author(s): Katsumi Nakamura ; Fumihito Masuoka ; Akito Nishii ; Shin-ichi Nishizawa ; Akihiko Furukawa
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 8
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2941710
Regular:

In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior... View More

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