IEEE - Institute of Electrical and Electronics Engineers, Inc. - Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering

Author(s): Yuxiong Long ; Jun Z. Huang ; Qianqian Huang ; Nuo Xu ; Xiangwei Jiang ; Zhi-Chuan Niu ; David Esseni ; Ru Huang ; Shu-Shen Li
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2940687
Regular:

We propose two different designs of p-type piezoelectric (PE) FinFETs (PE-FinFETs) covering low-power (LP) and high-performance (HP) operation modes. LP mode PE-FinFETs achieve a lower OFF-current... View More

Advertisement