IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Compact Model and Parameter Extraction Method for a Staggered OFET With Power-Law Contact Resistance and Mobility

Author(s): Sungyeop Jung ; Jong Woo Jin ; Vincent Mosser ; Yvan Bonnassieux ; Gilles Horowitz
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2941564
Regular:

We present a drain current model and a consistent parameter extraction method for organic field-effect transistors (OFETs) considering the gate voltage-dependent contact resistance and mobility by... View More

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