IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling Gain Mechanisms in Amorphous Silicon Due to Efficient Carrier Multiplication and Trap-Induced Junction Modulation

Author(s): Iftikhar Ahmad Niaz ; Yu-Hwa Lo ; Mohammad Abu Raihan Miah ; Lujiang Yan ; Yugang Yu ; Zhao-Yu He ; Yang Zhang ; Alex Ce Zhang ; Jiayun Zhou ; Yong-Hang Zhang
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2019
Volume: 37
Page(s): 5,056 - 5,066
ISSN (Electronic): 1558-2213
ISSN (Paper): 0733-8724
DOI: 10.1109/JLT.2019.2927622
Regular:

Amorphous materials have low mobility due to their nature of disorder. Surprisingly, some disordered materials showed photocurrent amplification not by conventional photoconductive gain. Recently,... View More

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