IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monolithically Integrated GaN LED/Quasi-Vertical Power U-shaped Trench-gate MOSFET Pairs using Selective Epi Removal

Author(s): Zhibo Guo ; Collin Hitchcock ; Christian Wetzel ; Robert F. Karlicek ; Guanxi Piao ; Yoshiki Yano ; Shuuichi Koseki ; Toshiya Tabuchi ; Koh Matsumoto ; Mayank Bulsara ; T. Paul Chow
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2943911
Regular:

We report on the demonstration of monolithically integrated light-emitting diode (LED) and quasi-vertical U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) in... View More

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