IEEE - Institute of Electrical and Electronics Engineers, Inc. - High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization

Author(s): Masaya Hamada ; Kentaro Matsuura ; Takuro Sakamoto ; Iriya Muneta ; Takuya Hoshii ; Kuniyuki Kakushima ; Kazuo Tsutsui ; Hitoshi Wakabayashi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2019.2943609
Regular:

A high Hall-effect mobility of 1,250 cm2V1s-1 is achieved in ZrS2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS2 film was obtained by sputtering and... View More

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