IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurement of Thermal Parameters of SiC MOSFET Module by Case Temperature

Author(s): Shuai Zheng ; Xiong Du ; Jun Zhang ; Yaoyi Yu ; Pengju Sun
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6785
ISSN (Paper): 2168-6777
DOI: 10.1109/JESTPE.2019.2943737
Regular:

SiC-based wide bandgap semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing Si devices in industrial applications because of... View More

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